RFP12N10L Tech Spezifikatioune
onsemi - RFP12N10L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFP12N10L
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 12A, 5V | |
| Power Dissipation (Max) | 60W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
| Basis Produktnummer | RFP12N10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFP12N10L.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | RFP12N10L | RFP12N06RLE | RFP12N10L | RFP14N05L |
| Hiersteller | onsemi | Harris Corporation | Fairchild Semiconductor | Fairchild Semiconductor |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 18A (Tc) | - | 14A (Tc) |
| Supplier Device Package | TO-220-3 | TO-220 | - | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V | ±16V | - | ±10V |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Package protegéieren | Tube | Bulk | Bulk | Tube |
| Basis Produktnummer | RFP12N10 | - | - | - |
| Package / Case | TO-220-3 | TO-220-3 | - | TO-220-3 |
| Serie | - | UltraFET™ | * | - |
| Power Dissipation (Max) | 60W (Tc) | 49W (Tc) | - | 48W (Tc) |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 3V @ 250µA | - | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | 485 pF @ 25 V | - | 670 pF @ 25 V |
| FET Typ | N-Channel | N-Channel | - | N-Channel |
| Entworf fir Source Voltage (Vdss) | 100 V | 60 V | - | 50 V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 12A, 5V | 63mOhm @ 18A, 10V | - | 100mOhm @ 14A, 5V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | 4.5V, 10V | - | 5V |
Eroflueden RFP12N10L PDF DataDhusts an onsemi Dokumentatioun fir RFP12N10L - onsemi.
RFP10P03LFairchild (onsemi)
RFP12N06Intersil (Renesas Electronics Corporation)RFP12P10Intersil (Renesas Electronics Corporation)RFP1109NSRFP12N06RLEHarris CorporationN-CHANNEL POWER MOSFETRFP10N15VBSEMIRFP100-50TWANARENCERAMICSINCRFP12N10LFairchild Semiconductor12A, 100V, 0.2OHM, N-CHANNEL, MORFP12P10H1Intersil (Renesas Electronics Corporation)RFP14N05LFairchild SemiconductorMOSFET N-CH 50V 14A TO220-3RFP12P10 MOSIntersil (Renesas Electronics Corporation)RFP14N05LonsemiMOSFET N-CH 50V 14A TO220-3
RFP100N50TWAnaren Wireless / TTM TechnologiesRFP12N10LHarris CorporationMOSFET N-CH 100V 12A TO220-3RFP10P15Harris CorporationP-CHANNEL POWER MOSFETRFP12N10L F12N10LFairchild (onsemi)RFP10P15HIHARRISRFP14N05onsemiMOSFET N-CH 50V 14A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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