RFG60P05E Tech Spezifikatioune
onsemi - RFG60P05E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFG60P05E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 60A, 10V | |
| Power Dissipation (Max) | 215W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 20 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
| Basis Produktnummer | RFG60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFG60P05E.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | RFG60P05E | RFG40N10 | RFG40N10 | RFG75N05E |
| Hiersteller | onsemi | Harris Corporation | onsemi | Harris Corporation |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Basis Produktnummer | RFG60 | RFG40 | RFG40 | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 60A, 10V | 40mOhm @ 40A, 10V | 40mOhm @ 40A, 10V | 8mOhm @ 75A, 10V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247 |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 20 V | 300 nC @ 20 V | 300 nC @ 20 V | 400 nC @ 20 V |
| Power Dissipation (Max) | 215W (Tc) | 160W (Tc) | 160W (Tc) | 240W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 50 V | 100 V | 100 V | 50 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 40A (Tc) | 40A (Tc) | 75A (Tc) |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden RFG60P05E PDF DataDhusts an onsemi Dokumentatioun fir RFG60P05E - onsemi.
RFGA0024TR13RFMDRFGA2044TR13RFMDRFGA2054RFMDRFG75N10HARRFG50N06VBsemiRFG40N10Harris CorporationN-CHANNEL POWER MOSFETRFGA2054TR13RFMDRFGA2044TR7RFMDRFG60P06HARRFG75N06HARRFG40N10onsemiMOSFET N-CH 100V 40A TO247-3RFG75N05EHarris CorporationN-CHANNEL POWER MOSFETRFGA0024QORVO
RFG60P06EFairchild (onsemi)RFG60N10Fairchild (onsemi)RFG40N10LEHarris CorporationN-CHANNEL POWER MOSFETRFG70N06onsemiMOSFET N-CH 60V 70A TO247-3RFG40N10Fairchild SemiconductorMOSFET N-CH 100V 40A TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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