RFD3055SM Tech Spezifikatioune
onsemi - RFD3055SM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFD3055SM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V | |
Power Dissipation (Max) | 53W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
Basis Produktnummer | RFD30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFD3055SM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RFD3055SM | RFD3055LESM | RFD3055LESM9A | RFD3055SM9A |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Supplier Device Package | TO-252AA | TO-252, (D-Pak) | TO-252AA | TO-252, (D-Pak) |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | 350 pF @ 25 V | 350 pF @ 25 V | 300 pF @ 25 V |
Power Dissipation (Max) | 53W (Tc) | 38W (Tc) | 38W (Tc) | 53W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Basis Produktnummer | RFD30 | - | RFD3055 | - |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Bulk |
Serie | - | - | - | - |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 11A (Tc) | 11A (Tc) | 12A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V | 11.3 nC @ 10 V | 11.3 nC @ 10 V | 23 nC @ 20 V |
Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V | 107mOhm @ 8A, 5V | 107mOhm @ 8A, 5V | 150mOhm @ 12A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 3V @ 250µA | 4V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V | 5V | 10V |
Vgs (Max) | ±20V | ±16V | ±16V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden RFD3055SM PDF DataDhusts an onsemi Dokumentatioun fir RFD3055SM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.