RFD14N05 Tech Spezifikatioune
onsemi - RFD14N05 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFD14N05
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V | |
Power Dissipation (Max) | 48W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 50 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | |
Basis Produktnummer | RFD14 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFD14N05.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RFD14N05 | RFD14N05SM | RFD14N05LSM9A | RFD12N06RLESM9A |
Hiersteller | onsemi | onsemi | Harris Corporation | Fairchild Semiconductor |
Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V | 570 pF @ 25 V | 670 pF @ 25 V | 485 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 50 V | 50 V | 50 V | 60 V |
Basis Produktnummer | RFD14 | RFD14 | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 5V | 4.5V, 10V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V | 100mOhm @ 14A, 10V | 100mOhm @ 14A, 5V | 63mOhm @ 18A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 2V @ 250µA | 3V @ 250µA |
Serie | - | - | - | UltraFET™ |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 20 V | 40 nC @ 20 V | 40 nC @ 10 V | 15 nC @ 10 V |
Vgs (Max) | ±20V | ±20V | ±10V | ±16V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 48W (Tc) | 48W (Tc) | 48W (Tc) | 49W (Tc) |
Package protegéieren | Tube | Tube | Bulk | Bulk |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | 14A (Tc) | 14A (Tc) | 18A (Tc) |
Supplier Device Package | I-PAK | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) |
Eroflueden RFD14N05 PDF DataDhusts an onsemi Dokumentatioun fir RFD14N05 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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