NVMYS8D0N04CTWG Tech Spezifikatioune
onsemi - NVMYS8D0N04CTWG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVMYS8D0N04CTWG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3.5V @ 30µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK4 (5x6) | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 38W (Tc) | |
Package / Case | SOT-1023, 4-LFPAK | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 49A (Tc) | |
Basis Produktnummer | NVMYS8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVMYS8D0N04CTWG.
Produktiounsattriff | ||||
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Part Number | NVMYS8D0N04CTWG | NVMS4816NR2G | NVMS5P02R2G | NVMFSC0D9N04CL |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | 10V |
Power Dissipation (Max) | 3.8W (Ta), 38W (Tc) | - | - | 4.1W (Ta), 166W (Tc) |
Supplier Device Package | LFPAK4 (5x6) | 8-SOIC | 8-SOIC | 8-DFN (5x6.15) |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 9.2 nC @ 4.5 V | 35 nC @ 4.5 V | 86 nC @ 10 V |
Vgs (th) (Max) @ Id | 3.5V @ 30µA | 3V @ 250µA | 1.25V @ 250µA | 3.5V @ 250µA |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 20 V | 40 V |
Vgs (Max) | ±20V | - | - | ±20V |
Basis Produktnummer | NVMYS8 | NVMS48 | NVMS5P02 | NVMFSC0 |
Package / Case | SOT-1023, 4-LFPAK | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-PowerVDFN |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V | 1060 pF @ 25 V | 1900 pF @ 16 V | 6100 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 49A (Tc) | 6.8A (Ta) | 3.95A (Ta) | 50A (Ta), 316A (Tc) |
Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V | 10mOhm @ 9A, 10V | 33mOhm @ 5.4A, 4.5V | 0.87mOhm @ 50A, 10V |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Eroflueden NVMYS8D0N04CTWG PDF DataDhusts an onsemi Dokumentatioun fir NVMYS8D0N04CTWG - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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