NVMFS5885NLT3G Tech Spezifikatioune
onsemi - NVMFS5885NLT3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVMFS5885NLT3G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V | |
Power Dissipation (Max) | 3.7W (Ta), 54W (Tc) | |
Package / Case | 8-PowerTDFN, 5 Leads | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1340 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.2A (Ta) | |
Basis Produktnummer | NVMFS5885 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVMFS5885NLT3G | NVMFS5A140PLZWFT1G | NVMFS5833NWFT1G | NVMFS5834NLT1G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) |
Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 40 V | 40 V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.6V @ 1mA | 3.5V @ 250µA | 3V @ 250µA |
Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V | 4.2mOhm @ 50A, 10V | 7.5mOhm @ 40A, 10V | 9.3mOhm @ 20A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.2A (Ta) | 20A (Ta), 140A (Tc) | 16A (Ta) | 14A (Ta), 75A (Tc) |
Power Dissipation (Max) | 3.7W (Ta), 54W (Tc) | 3.8W (Ta), 200W (Tc) | 3.7W (Ta), 112W (Tc) | 3.6W (Ta), 107W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | NVMFS5885 | NVMFS5 | NVMFS5 | NVMFS5834 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 1340 pF @ 25 V | 7400 pF @ 20 V | 1714 pF @ 25 V | 1231 pF @ 20 V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 136 nC @ 10 V | 32.5 nC @ 10 V | 24 nC @ 10 V |
FET Feature | - | - | - | - |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Package / Case | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Eroflueden NVMFS5885NLT3G PDF DataDhusts an onsemi Dokumentatioun fir NVMFS5885NLT3G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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