NVMFS014P04M8LT1G Tech Spezifikatioune
onsemi - NVMFS014P04M8LT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVMFS014P04M8LT1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2.4V @ 420µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 15A, 10V | |
| Power Dissipation (Max) | 3.6W (Ta), 60W (Tc) | |
| Package / Case | 8-PowerTDFN, 5 Leads | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1734 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 26.5 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.5A (Ta), 52.1A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVMFS014P04M8LT1G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NVMFS014P04M8LT1G | NVMFS3D0P04M8LT1G | NVMFS015N10MCLT1G | NVMFS4841NWFT1G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Power Dissipation (Max) | 3.6W (Ta), 60W (Tc) | 3.9W (Ta), 171W (Tc) | 3W (Ta), 79W (Tc) | 3.7W (Ta), 112W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 26.5 nC @ 10 V | 124 nC @ 10 V | 19 nC @ 10 V | 17 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 100 V | 30 V |
| Package / Case | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads |
| FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.5A (Ta), 52.1A (Tc) | 28A (Ta), 183A (Tc) | 10.5A (Ta), 54A (Tc) | 16A (Ta) |
| Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 15A, 10V | 2.7mOhm @ 30A,10V | 12.2mOhm @ 14A, 10V | 7mOhm @ 30A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1734 pF @ 20 V | 5827 pF @ 20 V | 1338 pF @ 50 V | 1436 pF @ 12 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 2.4V @ 420µA | 2.4V @ 2mA | 2.2V @ 282µA | 2.5V @ 250µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Eroflueden NVMFS014P04M8LT1G PDF DataDhusts an onsemi Dokumentatioun fir NVMFS014P04M8LT1G - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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