NVHL110N65S3F Tech Spezifikatioune
onsemi - NVHL110N65S3F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVHL110N65S3F
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 3mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | Automotive, AEC-Q101, SuperFET® III, FRFET® | |
Rds On (Max) @ Id, Vgs | 110mOhm @ 15A, 10V | |
Power Dissipation (Max) | 240W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 400 V | |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
Basis Produktnummer | NVHL110 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVHL110N65S3F.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVHL110N65S3F | IRF1310NSTRRPBF | NVH4L080N120SC1 | IRFL110TR |
Hiersteller | onsemi | Infineon Technologies | onsemi | Vishay Siliconix |
Package / Case | TO-247-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-247-4 | TO-261-4, TO-261AA |
Serie | Automotive, AEC-Q101, SuperFET® III, FRFET® | HEXFET® | Automotive, AEC-Q101 | - |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 400 V | 1900 pF @ 25 V | 1670 pF @ 800 V | 180 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | 110 nC @ 10 V | 56 nC @ 20 V | 8.3 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 42A (Tc) | 29A (Tc) | 1.5A (Tc) |
Vgs (th) (Max) @ Id | 5V @ 3mA | 4V @ 250µA | 4.3V @ 5mA | 4V @ 250µA |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Vgs (Max) | ±30V | ±20V | +25V, -15V | ±20V |
Power Dissipation (Max) | 240W (Tc) | 3.8W (Ta), 160W (Tc) | 170mW (Tc) | 2W (Ta), 3.1W (Tc) |
Supplier Device Package | TO-247-3 | D2PAK | TO-247-4L | SOT-223 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 20V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 650 V | 100 V | 1200 V | 100 V |
Basis Produktnummer | NVHL110 | - | NVH4L080 | IRFL110 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 110mOhm @ 15A, 10V | 36mOhm @ 22A, 10V | 110mOhm @ 20A, 20V | 540mOhm @ 900mA, 10V |
FET Feature | - | - | - | - |
Eroflueden NVHL110N65S3F PDF DataDhusts an onsemi Dokumentatioun fir NVHL110N65S3F - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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