NVD5807NT4G Tech Spezifikatioune
onsemi - NVD5807NT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVD5807NT4G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 10V | |
Power Dissipation (Max) | 33W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 603 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Tc) | |
Basis Produktnummer | NVD580 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVD5807NT4G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVD5807NT4G | NVD5484NLT4G | NVD5805NT4G | NVD5806NT4G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 603 pF @ 25 V | 1410 pF @ 25 V | 1725 pF @ 25 V | 860 pF @ 25 V |
Basis Produktnummer | NVD580 | NVD548 | NVD580 | NVD580 |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 3.5V @ 250µA | 2.5V @ 250µA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Supplier Device Package | DPAK | DPAK-3 | DPAK | DPAK |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 5V, 10V | 4.5V, 10V |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Tc) | 10.7A (Ta), 54A (Tc) | 51A (Tc) | 33A (Tc) |
Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 10V | 17mOhm @ 25A, 10V | 9.5mOhm @ 15A, 10V | 19mOhm @ 15A, 10V |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 40 V | 60 V | 40 V | 40 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | 33W (Tc) | 3.9W (Ta), 100W (Tc) | 47W (Tc) | 40W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 48 nC @ 10 V | 80 nC @ 10 V | 38 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden NVD5807NT4G PDF DataDhusts an onsemi Dokumentatioun fir NVD5807NT4G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.