NVD5117PLT4G Tech Spezifikatioune
onsemi - NVD5117PLT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVD5117PLT4G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V | |
Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta), 61A (Tc) | |
Basis Produktnummer | NVD511 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVD5117PLT4G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVD5117PLT4G | NVD4856NT4G | NVD4815NT4G | NVD5413NT4G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Supplier Device Package | DPAK | DPAK | DPAK-3 | DPAK |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | 27 nC @ 4.5 V | 6.6 nC @ 4.5 V | 46 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta), 61A (Tc) | 13.3A (Ta), 89A (Tc) | 6.9A (Ta), 35A (Tc) | 30A (Tc) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 4V @ 250µA |
Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) | 1.33W (Ta), 60W (Tc) | 1.26W (Ta), 32.6W (Tc) | 68W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V | 4.7mOhm @ 30A, 10V | 15mOhm @ 30A, 10V | 26mOhm @ 20A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | 2241 pF @ 12 V | 770 pF @ 12 V | 1725 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 60 V | 25 V | 30 V | 60 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Basis Produktnummer | NVD511 | NVD485 | NVD481 | NVD541 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 11.5V | 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden NVD5117PLT4G PDF DataDhusts an onsemi Dokumentatioun fir NVD5117PLT4G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.