NTTFD2D8N03P1E Tech Spezifikatioune
onsemi - NTTFD2D8N03P1E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTTFD2D8N03P1E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 400µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 12-WQFN (3.3x3.3) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 18A, 10V | |
| Power - Max | 1.04W (Ta), 26W (Ta) | |
| Package / Case | 12-PowerWQFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V, 1521pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 20.8nC @ 10V, 20.5nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16.1A (Ta), 80A (Tc) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | NTTFD2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTTFD2D8N03P1E.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | NTTFD2D8N03P1E | NTTD1P02R2 | NTTF4821NTAG | NTTFS008P03P8Z |
| Hiersteller | onsemi | onsemi | AMI Semiconductor/onsemi | ONsemi |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | - | - |
| Package / Case | 12-PowerWQFN | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16.1A (Ta), 80A (Tc) | 1.45A | - | - |
| Serie | PowerTrench® | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V, 1521pF @ 15V | 265pF @ 16V | - | - |
| Entworf fir Source Voltage (Vdss) | 30V | 20V | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 20.8nC @ 10V, 20.5nC @ 10V | 10nC @ 4.5V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Basis Produktnummer | NTTFD2 | NTTD1 | - | - |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 18A, 10V | 160mOhm @ 1.45A, 4.5V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Supplier Device Package | 12-WQFN (3.3x3.3) | 8-MSOP | - | - |
| Power - Max | 1.04W (Ta), 26W (Ta) | 500mW | - | - |
| Vgs (th) (Max) @ Id | 3V @ 400µA | 1.4V @ 250µA | - | - |
| FET Feature | - | Logic Level Gate | - | - |
Eroflueden NTTFD2D8N03P1E PDF DataDhusts an onsemi Dokumentatioun fir NTTFD2D8N03P1E - onsemi.
NTTD1P02R2onsemiMOSFET 2P-CH 20V 1.45A 8MICRONTTF4821NTAGAMI Semiconductor/onsemiNTTFS008P03P8ZONsemiNTTFS4821NAMI Semiconductor/onsemiNTTD4401FR2GonsemiMOSFET P-CH 20V 2.4A MICRO8NTTFS4800NTWGonsemiMOSFET N-CH 30V 5A/32A 8WDFNNTTFS1D2N02P1EonsemiMOSFET N-CH 25V 23A/180A 8PQFNNTTFS4800NTAGonsemiMOSFET N-CH 30V 5A/32A 8WDFNNTTFS3A08PZTWGonsemiMOSFET P-CH 20V 9A 8WDFNNTTFS115P10M5ONsemiNTTFS1D8N02P1EonsemiMOSFET N-CH 25V 20A/152A 8PQFNNTTFS012N10MDTAGonsemiPTNG 100V LOW Q 12MOHM N-FET, U8NTTD4401FR2onsemiMOSFET P-CH 20V 2.4A MICRO8NTTFS2D1N04HLTWGONsemiNTTFS3A08PZTAGonsemiMOSFET P-CH 20V 9A 8WDFNNTTFS015P03P8ZTAGONsemiNTTFD4D0N04HLTWGONsemiNTTFS3A08PZAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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