NTMS5P02R2G Tech Spezifikatioune
onsemi - NTMS5P02R2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMS5P02R2G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.25V @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 33mOhm @ 5.4A, 4.5V | |
Power Dissipation (Max) | 790mW (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 16 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.95A (Ta) | |
Basis Produktnummer | NTMS5 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMS5P02R2G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTMS5P02R2G | NTMS4935NR2G | NTMSD3P102R2SG | NTMS5838NLR2G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Serie | - | - | FETKY™ | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 790mW (Ta) | 810mW (Ta) | 730mW (Ta) | 1.5W (Ta) |
FET Typ | P-Channel | N-Channel | P-Channel | N-Channel |
Vgs (th) (Max) @ Id | 1.25V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 16 V | 3639 pF @ 25 V | 750 pF @ 16 V | 785 pF @ 20 V |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V | 52.1 nC @ 10 V | 25 nC @ 10 V | 17 nC @ 10 V |
Vgs (Max) | ±10V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 33mOhm @ 5.4A, 4.5V | 5.1mOhm @ 7.5A, 10V | 85mOhm @ 3.05A, 10V | 25mOhm @ 7A, 10V |
Basis Produktnummer | NTMS5 | NTMS49 | NTMSD3 | NTMS58 |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
FET Feature | - | - | Schottky Diode (Isolated) | - |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 40 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.95A (Ta) | 10A (Ta) | 2.34A (Ta) | 5.8A (Ta) |
Eroflueden NTMS5P02R2G PDF DataDhusts an onsemi Dokumentatioun fir NTMS5P02R2G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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