NTMS4107NR2G Tech Spezifikatioune
onsemi - NTMS4107NR2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMS4107NR2G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V | |
| Power Dissipation (Max) | 930mW (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta) | |
| Basis Produktnummer | NTMS41 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMS4107NR2G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NTMS4107NR2G | NTMS10P02R2 | NTMS4176PR2G | NTMS3P03R2 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (Max) | ±20V | ±12V | ±25V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 930mW (Ta) | 1.6W (Ta) | 810mW (Ta) | 730mW (Ta) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 15 V | 3640 pF @ 16 V | 1720 pF @ 24 V | 750 pF @ 24 V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V | 14mOhm @ 10A, 4.5V | 18mOhm @ 9.6A, 10V | 85mOhm @ 3.05A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1.2V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V | 70 nC @ 4.5 V | 17 nC @ 4.5 V | 25 nC @ 10 V |
| Serie | - | - | - | - |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 30 V | 30 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta) | 8.8A (Ta) | 5.5A (Ta) | 2.34A (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
| Basis Produktnummer | NTMS41 | NTMS10 | NTMS41 | NTMS3P |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| FET Feature | - | - | - | - |
Eroflueden NTMS4107NR2G PDF DataDhusts an onsemi Dokumentatioun fir NTMS4107NR2G - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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