NTMFD5C674NLT1G Tech Spezifikatioune
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| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2.2V @ 25µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 10A, 10V | |
| Power - Max | 3W (Ta), 37W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 60V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta), 42A (Tc) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | NTMFD5 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMFD5C674NLT1G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NTMFD5C674NLT1G | NTMFD4C86NT3G | NTMFD4C87NT1G | NTMFD4C86NT1G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Serie | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V | 22.2nC @ 10V | 22.2nC @ 10V | 22.2nC @ 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Ta), 42A (Tc) | 11.3A, 18.1A | 11.7A, 14.9A | 11.3A, 18.1A |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 60V | 30V | 30V | 30V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V | 1153pF @ 15V | 1252pF @ 15V | 1153pF @ 15V |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 10A, 10V | 5.4mOhm @ 30A, 10V | 5.4mOhm @ 30A, 10V | 5.4mOhm @ 30A, 10V |
| Vgs (th) (Max) @ Id | 2.2V @ 25µA | 2.2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 8-DFN (5x6) | 8-DFN (5x6) | 8-DFN (5x6) |
| Basis Produktnummer | NTMFD5 | NTMFD4 | NTMFD4 | NTMFD4 |
| Power - Max | 3W (Ta), 37W (Tc) | 1.1W | 1.1W | 1.1W |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Eroflueden NTMFD5C674NLT1G PDF DataDhusts an onsemi Dokumentatioun fir NTMFD5C674NLT1G - onsemi.
NTMFD4C86NT3GonsemiMOSFET 2N-CH 30V 11.3/18.1A 8DFNNTMFD4C87NT1GonsemiMOSFET 2N-CH 30V 8DFNNTMFD4C86NT1G MOSAMI Semiconductor/onsemiNTMFD4C85NT1G MOSAMI Semiconductor/onsemiNTMFS015N15MConsemiMOSFET N-CH 150V 9.2A/61A 8PQFNNTMFS005P03P8ZT1GONsemiNTMFS002P03P8ZT1GonsemiMOSFET, POWER -30V P-CHANNEL, SONTMFS0D55N03CGT1GonsemiWIDE SOANTMFD4H088NFT1GAMI Semiconductor/onsemiNTMFS006N12MCT1GONsemiNTMFS005N10MCLT1GONsemiNTMFD4C86NFT1GAMI Semiconductor/onsemiNTMFD4H089NFT1GAMI Semiconductor/onsemiNTMFS008N12MCT1GonsemiSINGLE N-CHANNEL POWER MOSFET 12NTMFD5C650NLT1GONsemiNTMFD4C86NT1GonsemiMOSFET 2N-CH 30V 8DFNNTMFS0D7N03CGT1GonsemiMOSFET N-CH 30V 59A/409A 5DFNNTMFS011N15MConsemiMOSFET N-CH 150V 10.7A/78A 8PQFN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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