NTMFD4C20NT1G Tech Spezifikatioune
onsemi - NTMFD4C20NT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMFD4C20NT1G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.1V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 10A, 10V | |
Power - Max | 1.09W, 1.15W | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 4.5V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.1A, 13.7A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | NTMFD4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMFD4C20NT1G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTMFD4C20NT1G | NTMFD4C85NT1G | NTMFD4C87NT1G | NTMFD4902NFT1G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
FET Feature | - | - | - | Logic Level Gate |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 15V | 1960pF @ 15V | 1252pF @ 15V | 1150pF @ 15V |
Basis Produktnummer | NTMFD4 | NTMFD4 | NTMFD4 | NTMFD4902 |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.1A, 13.7A | 15.4A, 29.7A | 11.7A, 14.9A | 10.3A, 13.3A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 10A, 10V | 3mOhm @ 20A, 10V | 5.4mOhm @ 30A, 10V | 6.5mOhm @ 10A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 9.3nC @ 4.5V | 32nC @ 10V | 22.2nC @ 10V | 9.7nC @ 4.5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual), Schottky |
Power - Max | 1.09W, 1.15W | 1.13W | 1.1W | 1.1W, 1.16W |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-DFN (5x6) | 8-DFN (5x6) | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Vgs (th) (Max) @ Id | 2.1V @ 250µA | 2.1V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
Eroflueden NTMFD4C20NT1G PDF DataDhusts an onsemi Dokumentatioun fir NTMFD4C20NT1G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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