NTMD6P02R2G Tech Spezifikatioune
onsemi - NTMD6P02R2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMD6P02R2G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6.2A, 4.5V | |
| Power - Max | 750mW | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.8A | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | NTMD6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMD6P02R2G.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | NTMD6P02R2G | NTMD6P02R2 | NTMD6N03R2 | NTMD6N03R2G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 6.2A, 4.5V | - | 32mOhm @ 6A, 10V | 32mOhm @ 6A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | - | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V | - | 30nC @ 10V | 30nC @ 10V |
| Basis Produktnummer | NTMD6 | NTMD6P | NTMD6 | NTMD6 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.8A | - | 6A | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V | - | 950pF @ 24V | 950pF @ 24V |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | - | - | - | - |
| Supplier Device Package | 8-SOIC | - | 8-SOIC | 8-SOIC |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
| Power - Max | 750mW | - | 1.29W | 1.29W |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Entworf fir Source Voltage (Vdss) | 20V | - | 30V | 30V |
| FET Feature | Logic Level Gate | - | Logic Level Gate | Logic Level Gate |
| Konfiguratioun | 2 P-Channel (Dual) | - | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Eroflueden NTMD6P02R2G PDF DataDhusts an onsemi Dokumentatioun fir NTMD6P02R2G - onsemi.
NTMD6P02R2onsemiMOSFET PWR P-CHAN DUAL 20V 8SOICNTMD6N03R2onsemiMOSFET 2N-CH 30V 6A 8SOICNTMD6N03R2GonsemiMOSFET 2N-CH 30V 6A 8SOIC
NTMD6N03R2G MOSAMI Semiconductor/onsemiNTMD6N03AMI Semiconductor/onsemiNTMD6601NR2GonsemiMOSFET 2N-CH 80V 1.1A 8SOICNTMF5C612NLT1GAMI Semiconductor/onsemiNTMFD001N03P9onsemiPOWER MOSFET, N-CHANNEL POWERTRENTMD6N02R2GonsemiMOSFET 2N-CH 20V 3.92A 8SOICNTMF4934AS1AMI Semiconductor/onsemiNTMFD4901NFT3GonsemiMOSFET 2N-CH 30V 8DFNNTMFD4902NFT1GonsemiMOSFET 2N-CH 30V 8DFNNTMF4937AS1AMI Semiconductor/onsemiNTMD6N04R2GonsemiMOSFET 2N-CH 40V 4.6A 8SOICNTMD6N04AMI Semiconductor/onsemiNTMFD4901NFT1GonsemiMOSFET 2N-CH 30V 8DFNNTMFD2D4N03P8ONsemiNTMFD4902NFT3GonsemiMOSFET 2N-CH 30V 8DFN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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