NTMD2P01R2G Tech Spezifikatioune
onsemi - NTMD2P01R2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTMD2P01R2G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.4A, 4.5V | |
| Power - Max | 710mW | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 16V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.3A | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | NTMD2P |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTMD2P01R2G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NTMD2P01R2G | NTMC1300R2 | NTMD3N08LR2 | NTMD2C02R2 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 2.2V @ 250µA | 3V @ 250µA | 1.2V @ 250µA |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Basis Produktnummer | NTMD2P | NTMC13 | NTMD3 | NTMD2C |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | 5nC @ 4.5V | 15nC @ 10V | 20nC @ 4.5V |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.3A | 2.2A, 1.8A | 2.3A | 5.2A, 3.4A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power - Max | 710mW | 2W | 3.1W | 2W |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 16V | 30V | 80V | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V | 300pF @ 20V | 480pF @ 25V | 1100pF @ 10V |
| Konfiguratioun | 2 P-Channel (Dual) | N and P-Channel | 2 N-Channel (Dual) | N and P-Channel |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.4A, 4.5V | 90mOhm @ 3A, 10V | 215mOhm @ 2.5A, 10V | 43mOhm @ 4A, 4.5V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | - | - | - | - |
Eroflueden NTMD2P01R2G PDF DataDhusts an onsemi Dokumentatioun fir NTMD2P01R2G - onsemi.
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NTMD3P03R2onsemiMOSFET PWR P-CHAN DUAL 30V 8SOICNTM2369-T1BNEC
NTM88H135T1NXP SemiconductorsNTMC083NP10M5LonsemiNTMC083NP10M5LNTMD4184PFR2GonsemiDUAL P-CHANNEL FETKY POWER MOSFENTMD3N03MOTNTM2369-T2BNECNTMD3N08LR2GVBSEMINTMD3P03R2GonsemiMOSFET 2P-CH 30V 2.34A 8SOICNTMD2C02R2GonsemiMOSFET N/P-CH 20V 8SOIC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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