NTLUS3C18PZTBG Tech Spezifikatioune
onsemi - NTLUS3C18PZTBG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTLUS3C18PZTBG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-UDFN (1.6x1.6) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 4.5V | |
Power Dissipation (Max) | 660mW (Ta) | |
Package / Case | 6-PowerUFDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 6 V | |
Gate Charge (Qg) (Max) @ Vgs | 15.8 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 12 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Ta) | |
Basis Produktnummer | NTLUS3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTLUS3C18PZTBG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTLUS3C18PZTBG | NTLUS3A18PZCTAG | NTLUS3A90PZTAG | NTLUS4930NTAG |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Basis Produktnummer | NTLUS3 | NTLUS3A | NTLUS3 | NTLUS4930 |
Gate Charge (Qg) (Max) @ Vgs | 15.8 nC @ 4.5 V | 28 nC @ 4.5 V | 12.3 nC @ 4.5 V | 8.7 nC @ 10 V |
Power Dissipation (Max) | 660mW (Ta) | - | 600mW (Ta) | 650mW (Ta) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Supplier Device Package | 6-UDFN (1.6x1.6) | 6-UDFN (2x2) | 6-UDFN (1.6x1.6) | 6-UDFN (2x2) |
Vgs (Max) | ±8V | ±8V | ±8V | ±20V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 6 V | 2240 pF @ 15 V | 950 pF @ 10 V | 476 pF @ 15 V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.5V, 4.5V | 1.5V, 4.5V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 4.5V | 18mOhm @ 7A, 4.5V | 62mOhm @ 4A, 4.5V | 28.5mOhm @ 6.1A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 2.2V @ 250µA |
Serie | - | - | µCool™ | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Ta) | 5.1A (Ta) | 2.6A (Ta) | 3.8A (Ta) |
Package / Case | 6-PowerUFDFN | 6-UDFN Exposed Pad | 6-PowerUFDFN | 6-UDFN Exposed Pad |
Entworf fir Source Voltage (Vdss) | 12 V | 20 V | 20 V | 30 V |
Eroflueden NTLUS3C18PZTBG PDF DataDhusts an onsemi Dokumentatioun fir NTLUS3C18PZTBG - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.