NTLJS3113PTAG Tech Spezifikatioune
onsemi - NTLJS3113PTAG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTLJS3113PTAG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-WDFN (2x2) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V | |
Power Dissipation (Max) | 700mW (Ta) | |
Package / Case | 6-WDFN Exposed Pad | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 16 V | |
Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | |
Basis Produktnummer | NTLJS31 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTLJS3113PTAG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTLJS3113PTAG | NTLJS5D0N03CTAG | NTLJF4156NTAG | NTLJS17D0P03P8ZTAG |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 4.5V, 10V | 1.5V, 4.5V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V | 4.38mOhm @ 10A, 10V | 70mOhm @ 2A, 4.5V | 11.3mOhm @ 10A, 10V |
Serie | - | - | - | - |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 700mW (Ta) | 860mW (Ta) | 710mW (Ta) | 860mW (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | 6-WDFN (2x2) | 6-PQFN (2x2) | 6-WDFN (2x2) | 6-PQFN (2x2) |
Package / Case | 6-WDFN Exposed Pad | 6-PowerWDFN | 6-WDFN Exposed Pad | 6-PowerWDFN |
Basis Produktnummer | NTLJS31 | NTLJS5 | NTLJF4156 | NTLJS17 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 30 V | 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | 11.2A (Ta) | 2.5A (Tj) | 7A (Ta) |
FET Feature | - | - | Schottky Diode (Isolated) | - |
Vgs (th) (Max) @ Id | 1V @ 250µA | 2.2V @ 250µA | 1V @ 250µA | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 4.5 V | 18 nC @ 10 V | 6.5 nC @ 4.5 V | 38 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 16 V | 1255 pF @ 15 V | 427 pF @ 15 V | 1600 pF @ 15 V |
Vgs (Max) | ±8V | ±20V | ±8V | ±25V |
Eroflueden NTLJS3113PTAG PDF DataDhusts an onsemi Dokumentatioun fir NTLJS3113PTAG - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.