NTDV2955PT4G Tech Spezifikatioune
onsemi - NTDV2955PT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTDV2955PT4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | - | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | - | |
| Mounting Type | Surface Mount | |
| FET Typ | - | |
| FET Feature | - | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
| Basis Produktnummer | NTDV29 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTDV2955PT4G.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | NTDV2955PT4G | NTD95N02RG | NTD85N02R-1G | NTD95N02RT4G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Power Dissipation (Max) | - | 1.25W (Ta), 86W (Tc) | 1.25W (Ta), 78.1W (Tc) | 1.25W (Ta), 86W (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| FET Typ | - | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | 12A (Ta), 32A (Tc) | 12A (Ta), 85A (Tc) | 12A (Ta), 32A (Tc) |
| Technologie | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | - | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Basis Produktnummer | NTDV29 | NTD95 | NTD85 | NTD95 |
| Supplier Device Package | DPAK | DPAK | I-PAK | DPAK |
| Operatioun Temperatur | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - | 5mOhm @ 20A, 10V | 5.2mOhm @ 20A, 10V | 5mOhm @ 20A, 10V |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Eroflueden NTDV2955PT4G PDF DataDhusts an onsemi Dokumentatioun fir NTDV2955PT4G - onsemi.
NTD85N02RT4G 85N02GAMI Semiconductor/onsemiNTD85N02RT4G MOSAMI Semiconductor/onsemiNTD85N02-1GAMI Semiconductor/onsemiNTD95N02RGonsemiMOSFET N-CH 24V 12A/32A DPAKNTD9N05CLT4AMI Semiconductor/onsemiNTD85N02R-1GonsemiMOSFET N-CH 24V 12A/85A IPAKNTD95N02RT4GonsemiMOSFET N-CH 24V 12A/32A DPAKNTD85N02GAMI Semiconductor/onsemiNTD95N02RT4G MOSAMI Semiconductor/onsemiNTDV5804NT4GonsemiMOSFET N-CH 40V 69A DPAKNTD95N02RonsemiMOSFET N-CH 24V 12A/32A DPAKNTD85N02RT4GonsemiMOSFET N-CH 24V 12A/85A DPAKNTDV20N06LT4GonsemiSINGLE N-CHANNEL LOGIC LEVEL POWNTDV20P06LT4G-VF01onsemiPFET DPAK 60V 15.5A 130RNTD85N02R-001onsemiMOSFET N-CH 24V 12A/85A IPAKNTD85N02RT4onsemiMOSFET N-CH 24V 12A/85A DPAKNTDV3055L104T4GonsemiMOSFET N-CH 60V 12A DPAKNTDV20P06LT4GonsemiMOSFET P-CH 60V 15.5A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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