NTD80N02 Tech Spezifikatioune
onsemi - NTD80N02 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTD80N02
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V | |
Power Dissipation (Max) | 75W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 24 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | NTD80 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | RoHS net konform |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTD80N02.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTD80N02 | NTD78N03-35G | NTD78N03T4G | NTD80N02T4 |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V | 6mOhm @ 78A, 10V | 6mOhm @ 78A, 10V | 5.8mOhm @ 80A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 11.4A (Ta), 78A (Tc) | 11.4A (Ta), 78A (Tc) | 80A (Tc) |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V | 2250 pF @ 12 V | 2250 pF @ 12 V | 2600 pF @ 20 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Stub Leads, IPak | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 75W (Tc) | 1.4W (Ta), 64W (Tc) | 1.4W (Ta), 64W (Tc) | 75W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Basis Produktnummer | NTD80 | NTD78 | NTD78 | NTD80 |
Supplier Device Package | DPAK | I-Pak | DPAK | DPAK |
Serie | - | - | - | - |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 24 V | 25 V | 25 V | 24 V |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V | 35 nC @ 4.5 V | 35 nC @ 4.5 V | 42 nC @ 4.5 V |
Eroflueden NTD80N02 PDF DataDhusts an onsemi Dokumentatioun fir NTD80N02 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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