NTD6416AN-1G Tech Spezifikatioune
onsemi - NTD6416AN-1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTD6416AN-1G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 81mOhm @ 17A, 10V | |
Power Dissipation (Max) | 71W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | NTD64 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTD6416AN-1G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTD6416AN-1G | NTD6416ANT4G | NTD6415ANT4G | NTD65N03RT4G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 20 nC @ 10 V | 29 nC @ 10 V | 16 nC @ 5 V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 25 V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 2V @ 250µA |
Serie | - | - | - | - |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 81mOhm @ 17A, 10V | 81mOhm @ 17A, 10V | 55mOhm @ 23A, 10V | 8.4mOhm @ 30A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 17A (Tc) | 23A (Tc) | 9.5A (Ta), 32A (Tc) |
Supplier Device Package | I-PAK | DPAK | DPAK | DPAK |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | NTD64 | NTD6416 | NTD64 | NTD65 |
Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V | 620 pF @ 25 V | 700 pF @ 25 V | 1400 pF @ 20 V |
Power Dissipation (Max) | 71W (Tc) | 71W (Tc) | 83W (Tc) | 1.3W (Ta), 50W (Tc) |
Eroflueden NTD6416AN-1G PDF DataDhusts an onsemi Dokumentatioun fir NTD6416AN-1G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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