NTD4858NAT4G Tech Spezifikatioune
onsemi - NTD4858NAT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTD4858NAT4G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V | |
Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V | |
Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.2A (Ta), 73A (Tc) | |
Basis Produktnummer | NTD48 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTD4858NAT4G | NTD4858NT4G | NTD4863NAT4G | NTD4860NA-1G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Supplier Device Package | DPAK | DPAK | DPAK | I-PAK |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA |
Serie | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
Input Capacitance (Ciss) (Max) @ Vds | 1563 pF @ 12 V | 1563 pF @ 12 V | 990 pF @ 12 V | 1308 pF @ 12 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V | 6.2mOhm @ 30A, 10V | 9.3mOhm @ 30A, 10V | 7.5mOhm @ 30A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 19.2 nC @ 4.5 V | 19.2 nC @ 4.5 V | 13.5 nC @ 4.5 V | 21.8 nC @ 10 V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.2A (Ta), 73A (Tc) | 11.2A (Ta), 73A (Tc) | 9.2A (Ta), 49A (Tc) | 10.4A (Ta), 65A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | NTD48 | NTD4858 | NTD48 | NTD48 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Power Dissipation (Max) | 1.3W (Ta), 54.5W (Tc) | 1.3W (Ta), 54.5W (Tc) | 1.27W (Ta), 36.6W (Tc) | 1.28W (Ta), 50W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Eroflueden NTD4858NAT4G PDF DataDhusts an onsemi Dokumentatioun fir NTD4858NAT4G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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