NTD4805N-1G Tech Spezifikatioune
onsemi - NTD4805N-1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTD4805N-1G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V | |
Power Dissipation (Max) | 1.41W (Ta), 79W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2865 pF @ 12 V | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 11.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 11.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.7A (Ta), 95A (Tc) | |
Basis Produktnummer | NTD48 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTD4805N-1G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTD4805N-1G | NTD4804N-35G | NTD4804NT4G | NTD4806N-35G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Power Dissipation (Max) | 1.41W (Ta), 79W (Tc) | 1.43W (Ta), 107W (Tc) | 1.43W (Ta), 107W (Tc) | 1.4W (Ta), 68W (Tc) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Stub Leads, IPak | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Stub Leads, IPak |
Serie | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.7A (Ta), 95A (Tc) | 14.5A (Ta), 124A (Tc) | 14.5A (Ta), 124A (Tc) | 11.3A (Ta), 79A (Tc) |
Supplier Device Package | I-PAK | I-Pak | DPAK | I-Pak |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 11.5 V | 40 nC @ 4.5 V | 40 nC @ 4.5 V | 23 nC @ 4.5 V |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V | 4mOhm @ 30A, 10V | 4mOhm @ 30A, 10V | 6mOhm @ 30A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2865 pF @ 12 V | 4490 pF @ 12 V | 4490 pF @ 12 V | 2142 pF @ 12 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | NTD48 | NTD48 | NTD4804 | NTD48 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 11.5V | 4.5V, 11.5V | 4.5V, 11.5V | 4.5V, 11.5V |
Eroflueden NTD4805N-1G PDF DataDhusts an onsemi Dokumentatioun fir NTD4805N-1G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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