NTD12N10T4G Tech Spezifikatioune
onsemi - NTD12N10T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTD12N10T4G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 165mOhm @ 6A, 10V | |
Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta) | |
Basis Produktnummer | NTD12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTD12N10T4G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTD12N10T4G | NTD110N02RT4 | NTD14N03R | NTD12N10G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 165mOhm @ 6A, 10V | 4.6mOhm @ 20A, 10V | 95mOhm @ 5A, 10V | 165mOhm @ 6A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tube |
Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
Entworf fir Source Voltage (Vdss) | 100 V | 24 V | 25 V | 100 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 28 nC @ 4.5 V | 1.8 nC @ 5 V | 20 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta) | 12.5A (Ta), 110A (Tc) | 2.5A (Ta) | 12A (Ta) |
Serie | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) | 1.5W (Ta), 110W (Tc) | 1.04W (Ta), 20.8W (Tc) | 1.28W (Ta), 56.6W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V | 3440 pF @ 20 V | 115 pF @ 20 V | 550 pF @ 25 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | NTD12 | NTD110 | NTD14 | NTD12 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 2V @ 250µA | 2V @ 250µA | 4V @ 250µA |
Eroflueden NTD12N10T4G PDF DataDhusts an onsemi Dokumentatioun fir NTD12N10T4G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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