NTB35N15G Tech Spezifikatioune
onsemi - NTB35N15G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTB35N15G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 18.5A, 10V | |
Power Dissipation (Max) | 2W (Ta), 178W (Tj) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37A (Ta) | |
Basis Produktnummer | NTB35 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTB35N15G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTB35N15G | NTB30N06G | NTB30N06LG | NTB30N06T4G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Rds On (Max) @ Id, Vgs | 50mOhm @ 18.5A, 10V | 42mOhm @ 15A, 10V | 46mOhm @ 15A, 5V | 42mOhm @ 15A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 150 V | 60 V | 60 V | 60 V |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | 46 nC @ 10 V | 32 nC @ 5 V | 46 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 5V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37A (Ta) | 27A (Ta) | 30A (Ta) | 27A (Ta) |
Power Dissipation (Max) | 2W (Ta), 178W (Tj) | 88.2W (Tc) | 88.2W (Tc) | 88.2W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 2V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±15V | ±20V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Supplier Device Package | D²PAK | D²PAK | D²PAK | D²PAK |
Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V | 1200 pF @ 25 V | 1150 pF @ 25 V | 1200 pF @ 25 V |
Basis Produktnummer | NTB35 | NTB30 | NTB30 | NTB30 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
Eroflueden NTB35N15G PDF DataDhusts an onsemi Dokumentatioun fir NTB35N15G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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