NTA4151PT1H Tech Spezifikatioune
onsemi - NTA4151PT1H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTA4151PT1H
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
Vgs (Max) | ±6V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-75, SOT-416 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 350mA, 4.5V | |
Power Dissipation (Max) | 301mW (Tj) | |
Package / Case | SC-75, SOT-416 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | - | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 5 V | |
Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 760mA (Tj) | |
Basis Produktnummer | NTA4151 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTA4151PT1H.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NTA4151PT1H | NTA4001NT1 | NTA4153NT1G | NTA4001NT1G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 360mOhm @ 350mA, 4.5V | 3Ohm @ 10mA, 4.5V | 230mOhm @ 600mA, 4.5V | 3Ohm @ 10mA, 4.5V |
Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V | - | 1.82 nC @ 4.5 V | - |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Vgs (Max) | ±6V | ±10V | ±6V | ±10V |
Serie | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 2.5V, 4.5V | 1.5V, 4.5V | 2.5V, 4.5V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 301mW (Tj) | 300mW (Tj) | 300mW (Tj) | 300mW (Tj) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 156 pF @ 5 V | 20 pF @ 5 V | 110 pF @ 16 V | 20 pF @ 5 V |
Operatioun Temperatur | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 |
Basis Produktnummer | NTA4151 | NTA40 | NTA4153 | NTA4001 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 760mA (Tj) | 238mA (Tj) | 915mA (Ta) | 238mA (Tj) |
Vgs (th) (Max) @ Id | 1.2V @ 250µA | 1.5V @ 100µA | 1.1V @ 250µA | 1.5V @ 100µA |
Eroflueden NTA4151PT1H PDF DataDhusts an onsemi Dokumentatioun fir NTA4151PT1H - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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