NSS1C200MZ4T3G Tech Spezifikatioune
onsemi - NSS1C200MZ4T3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NSS1C200MZ4T3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 2A | |
| Transistor Type | PNP | |
| Supplier Device Package | SOT-223 (TO-261) | |
| Serie | - | |
| Power - Max | 800 mW | |
| Package / Case | TO-261-4, TO-261AA |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 120MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 2 A | |
| Basis Produktnummer | NSS1C200 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NSS1C200MZ4T3G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NSS1C200MZ4T3G | NSS1C200LT1G | NSS1C201LT1G | NSS1C201MZ4T1G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Power - Max | 800 mW | 490 mW | 490 mW | 800 mW |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | 100 V | 100 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V | 120 @ 50mA, 2V | 120 @ 500mA, 2V | 120 @ 500mA, 2V |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 2A | 250mV @ 200mA, 2A | 150mV @ 200mA, 2A | 180mV @ 200mA, 2A |
| Basis Produktnummer | NSS1C200 | NSS1C200 | NSS1C201 | NSS1C201 |
| Transistor Type | PNP | PNP | NPN | NPN |
| Frequenz - Iwwergang | 120MHz | 120MHz | 110MHz | 100MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-223 (TO-261) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Package / Case | TO-261-4, TO-261AA | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-261-4, TO-261AA |
| Aktuell - Sammler (Ic) (Max) | 2 A | 2 A | 2 A | 2 A |
Eroflueden NSS1C200MZ4T3G PDF DataDhusts an onsemi Dokumentatioun fir NSS1C200MZ4T3G - onsemi.
NSS12500UW3T2GRochester Electronics, LLCNSS12500U - TRANS BJTS PNP 12V 5NSS1C200LT1GonsemiTRANS PNP 100V 2A SOT23-3NSS12200LT1GRochester Electronics, LLCNSS12200L - TRANS BJTS PNP 12V 2NSS1C201LT1GonsemiTRANS NPN 100V 2A SOT23-3NSS200-50NAEIGBT ModuleNSS1C201MZ4T1GonsemiTRANS NPN 100V 2A SOT223
NSS12501UW3T2GONsemiNSS12201LT1GonsemiTRANS NPN 12V 2A SOT23-3
NSS20101JT1GonsemiTRANS NPN 20V 1A SC89-3NSS1C200MZT1GAMI Semiconductor/onsemi
NSS1C301ET4GonsemiTRANS NPN 100V 3A DPAKNSS12100XV6T1GRochester Electronics, LLCNSS12100XV6 - TRANS BJTS PNP 12VNSS12500UW3T2GonsemiTRANS PNP 12V 5A 3WDFNNSS1C201MZ4AMI Semiconductor/onsemiNSS1C200MZ4T1GonsemiTRANS PNP 100V 2A SOT223NSS1C201MZ4T3GonsemiTRANS NPN 100V 2A SOT223NSS12200LT1GonsemiTRANS PNP 12V 2A SOT23-3NSS1C300ET4GonsemiTRANS PNP 100V 3A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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