NSDEMP11XV6T1G Tech Spezifikatioune
onsemi - NSDEMP11XV6T1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NSDEMP11XV6T1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 100 mA | |
| Voltage - DC Reverse (Vr) (Max) | 80 V | |
| Technologie | Standard | |
| Supplier Device Package | SOT-563 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SOT-563, SOT-666 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Diode Configuration | 2 Pair Common Anode | |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 70 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 100mA (DC) | |
| Basis Produktnummer | NSDEMP11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NSDEMP11XV6T1G.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | NSDEMP11XV6T1G | MBR2545CT | SBR60A150CT | APT2X60S20J |
| Hiersteller | onsemi | Vishay General Semiconductor - Diodes Division | Diodes Incorporated | Microchip Technology |
| Basis Produktnummer | NSDEMP11 | MBR2545 | SBR60 | APT2X60 |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 175°C | -55°C ~ 150°C |
| Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tube |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Chassis Mount |
| Reverse Recovery Time (trr) | 4 ns | - | - | - |
| Speed | Small Signal =< 200mA (Io), Any Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - DC Reverse (Vr) (Max) | 80 V | 45 V | 150 V | 200 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 100mA (DC) | 15A | 30A | 75A |
| Technologie | Standard | Schottky | Super Barrier | Schottky |
| Package / Case | SOT-563, SOT-666 | TO-220-3 | TO-220-3 | SOT-227-4, miniBLOC |
| Diode Configuration | 2 Pair Common Anode | 1 Pair Common Cathode | 1 Pair Common Cathode | 2 Independent |
| Supplier Device Package | SOT-563 | TO-220-3 | TO-220-3 | SOT-227 (ISOTOP®) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 100 mA | 820 mV @ 30 A | 930 mV @ 30 A | 900 mV @ 60 A |
| Serie | - | - | SBR® | - |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 70 V | 200 µA @ 45 V | 500 µA @ 150 V | 1 mA @ 200 V |
Eroflueden NSDEMP11XV6T1G PDF DataDhusts an onsemi Dokumentatioun fir NSDEMP11XV6T1G - onsemi.
NSD03A20-TE16LNIECNSD03C20NIHONMBR2545CTVishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 45V TO220AB
NSD914XV2T5GonsemiDIODE GP 100V 200MA DO214AASBR60A150CTDiodes IncorporatedDIODE ARRAY SBR 150V 30A TO220ABAPT2X60S20JMicrochip TechnologySCHOTTKY RECTIFIER 200V 600A ISO
NSD05-12S12MEAN WELL USA Inc.DC DC CONVERTER 12V 5WNSDEMP11XV6T1onsemiDIODE ARRAY GP 80V 100MA SOT563NSD03A10-TE16LNIHON
NSD350HT1GonsemiDIODE GEN PURP 350V 200MA SOD323
NSD03A40KYOCERA AVXDIODE GEN PURP 400V 3A NSMC
NSD914XV2T1GonsemiDIODE GEN PURP 100V 200MA SOD523NSD1025-DSPRNovosenseNSDEMP11XV6T5onsemiDIODE ARRAY GP 80V 100MA SOT563NSD03A10NIHONNSD03C20-TE16LNIHONNSD03A40-TE16LSHINDENGEN
NSD914F3T5GonsemiDIODE GP 100V 200MA SOT1123| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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