NDT02N60ZT1G Tech Spezifikatioune
onsemi - NDT02N60ZT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NDT02N60ZT1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-223 (TO-261) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V | |
| Power Dissipation (Max) | 2W (Tc) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA (Tc) | |
| Basis Produktnummer | NDT02 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NDT02N60ZT1G.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | NDT02N60ZT1G | NDT02N40T1G | NDT3055 | NDT2955 |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Basis Produktnummer | NDT02 | NDT02 | - | NDT295 |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Entworf fir Source Voltage (Vdss) | 600 V | 400 V | 60 V | 60 V |
| Vgs (th) (Max) @ Id | 4.5V @ 50µA | 2V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 2W (Tc) | 2W (Tc) | 1.1W (Ta) | 3W (Ta) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Supplier Device Package | SOT-223 (TO-261) | SOT-223 (TO-261) | SOT-223-4 | SOT-223-4 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | 121 pF @ 25 V | 250 pF @ 30 V | 601 pF @ 30 V |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 700mA, 10V | 5.5Ohm @ 220mA, 10V | 100mOhm @ 4A, 10V | 300mOhm @ 2.5A, 10V |
| Serie | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA (Tc) | 400mA (Tc) | 4A (Ta) | 2.5A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V | 5.5 nC @ 10 V | 15 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
| FET Feature | - | - | - | - |
Eroflueden NDT02N60ZT1G PDF DataDhusts an onsemi Dokumentatioun fir NDT02N60ZT1G - onsemi.
NDT016-G1A-ABBTTMECNDT02N40T1GonsemiMOSFET N-CH 400V 400MA SOT223
NDT2955TAMI Semiconductor/onsemiNDT2955-NL MOSFairchild (onsemi)NDT3055Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 4NDT016-G1A-ADDTMISAKINDT2955onsemiMOSFET P-CH 60V 2.5A SOT-223-4NDT110N2AMI Semiconductor/onsemiNDT014Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2NDT2955-NLAMI Semiconductor/onsemiNDT014L MOSFairchild (onsemi)NDT2955EAMI Semiconductor/onsemiNDT2955 MOSFairchild (onsemi)NDT2955NLFairchild (onsemi)NDT014onsemiMOSFET N-CH 60V 2.7A SOT-223-4NDT014LonsemiMOSFET N-CH 60V 2.8A SOT223-4NDT014L-NLFairchild (onsemi)NDT014 MOSAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.