NDS332P Tech Spezifikatioune
onsemi - NDS332P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NDS332P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 300mOhm @ 1.1A, 4.5V | |
Power Dissipation (Max) | 500mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Ta) | |
Basis Produktnummer | NDS332 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NDS332P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NDS332P | NDS332P | NDS0610_NL | NDS335N |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 4.5V | 2.7V, 4.5V | 4.5V, 10V | 2.7V, 4.5V |
Power Dissipation (Max) | 500mW (Ta) | 500mW (Ta) | 360mW (Ta) | 500mW (Ta) |
Vgs (Max) | ±8V | ±8V | ±20V | 8V |
FET Feature | - | - | - | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V | 5 nC @ 4.5 V | 2.5 nC @ 10 V | 9 nC @ 4.5 V |
Rds On (Max) @ Id, Vgs | 300mOhm @ 1.1A, 4.5V | 300mOhm @ 1.1A, 4.5V | 10Ohm @ 500mA, 10V | 110mOhm @ 1.7A, 4.5V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 60 V | 20 V |
Basis Produktnummer | NDS332 | - | NDS061 | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Ta) | 1A (Ta) | 120mA (Ta) | 1.7A (Ta) |
Supplier Device Package | SOT-23-3 | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 3.5V @ 1mA | 1V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Bulk | - | Bulk |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 10 V | 195 pF @ 10 V | 79 pF @ 25 V | 240 pF @ 10 V |
Eroflueden NDS332P PDF DataDhusts an onsemi Dokumentatioun fir NDS332P - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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