NDP6020P Tech Spezifikatioune
onsemi - NDP6020P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NDP6020P
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 12A, 4.5V | |
| Power Dissipation (Max) | 60W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | |
| Basis Produktnummer | NDP602 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NDP6020P.
| Produktiounsattriff |  |
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|
|
|---|---|---|---|---|
| Part Number | NDP6020P | NDP6020P | NDP6030PL | NDP603AL |
| Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 10 V | 1590 pF @ 10 V | 1570 pF @ 15 V | 1100 pF @ 15 V |
| Vgs (Max) | ±8V | ±8V | ±16V | ±20V |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 30 V |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 2V @ 250µA | 3V @ 250µA |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Basis Produktnummer | NDP602 | NDP602 | - | NDP603 |
| FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
| Serie | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V | 35 nC @ 5 V | 36 nC @ 5 V | 40 nC @ 10 V |
| Package protegéieren | Tube | Bulk | Tube | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 24A (Tc) | 30A (Tc) | 25A (Tc) |
| Power Dissipation (Max) | 60W (Tc) | 60W (Tc) | 75W (Tc) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 12A, 4.5V | 50mOhm @ 12A, 4.5V | 25mOhm @ 19A, 10V | 22mOhm @ 25A, 10V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 4.5V | 4.5V, 10V | 4.5V, 10V |
Eroflueden NDP6020P PDF DataDhusts an onsemi Dokumentatioun fir NDP6020P - onsemi.
NDP506BLNSNDP6020PFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 2NDP6050NSNDP6030PLFairchild SemiconductorMOSFET P-CH 30V 30A TO220-3NDP603ALonsemiMOSFET N-CH 30V 25A TO220-3NDP6050LNSNDP510ANSNDP506AFairchild (onsemi)NDP508AELNSNDP6020P MOSNSNDP508BLNSNDP6050 MOSNSNDP6020NSNDP6030PLonsemiMOSFET P-CH 30V 30A TO220-3NDP6030LFairchild (onsemi)NDP5102SENDPNDP5060LFairchild (onsemi)NDP603ALFairchild SemiconductorMOSFET N-CH 30V 25A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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