NDD60N550U1T4G Tech Spezifikatioune
onsemi - NDD60N550U1T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NDD60N550U1T4G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V | |
Power Dissipation (Max) | 94W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.2A (Tc) | |
Basis Produktnummer | NDD60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NDD60N550U1T4G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NDD60N550U1T4G | NDD04N50ZT4G | NDD05N50ZT4G | NDD04N50Z-1G |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 94W (Tc) | 61W (Tc) | 83W (Tc) | 61W (Tc) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 500 V | 500 V |
Serie | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | NDD60 | NDD04 | NDD05 | NDD04 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V | 2.7Ohm @ 1.5A, 10V | 1.5Ohm @ 2.2A, 10V | 2.7Ohm @ 1.5A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | 12 nC @ 10 V | 18.5 nC @ 10 V | 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V | 308 pF @ 25 V | 530 pF @ 25 V | 308 pF @ 25 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.2A (Tc) | 3A (Tc) | 4.7A (Tc) | 3A (Tc) |
Supplier Device Package | DPAK | DPAK | DPAK | I-PAK |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 50µA | 4.5V @ 50µA | 4.5V @ 50µA |
Vgs (Max) | ±25V | ±30V | ±30V | ±30V |
Eroflueden NDD60N550U1T4G PDF DataDhusts an onsemi Dokumentatioun fir NDD60N550U1T4G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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