MVGSF1N02LT1G Tech Spezifikatioune
onsemi - MVGSF1N02LT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MVGSF1N02LT1G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 90mOhm @ 1.2A, 10V | |
Power Dissipation (Max) | 400mW (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 750mA (Ta) | |
Basis Produktnummer | MVGSF1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MVGSF1N02LT1G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | MVGSF1N02LT1G | ZXMN6A08GQTA | SUD19N20-90-E3 | BTS244Z E3043 |
Hiersteller | onsemi | Diodes Incorporated | Vishay Siliconix | Infineon Technologies |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-261-4, TO-261AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-5 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 750mA (Ta) | 3.8A (Ta) | 19A (Tc) | 35A (Tc) |
Supplier Device Package | SOT-23-3 (TO-236) | SOT-223-3 | TO-252AA | P-TO220-5-43 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Rds On (Max) @ Id, Vgs | 90mOhm @ 1.2A, 10V | 80mOhm @ 4.8A, 10V | 90mOhm @ 5A, 10V | 13mOhm @ 19A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 5 V | 459 pF @ 40 V | 1800 pF @ 25 V | 2660 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 6V, 10V | 4.5V, 10V |
Basis Produktnummer | MVGSF1 | ZXMN6 | SUD19 | - |
Entworf fir Source Voltage (Vdss) | 20 V | 60 V | 200 V | 55 V |
FET Feature | - | - | - | Temperature Sensing Diode |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | 1V @ 250µA | 4V @ 250µA | 2V @ 130µA |
Power Dissipation (Max) | 400mW (Ta) | 2W (Ta) | 3W (Ta), 136W (Tc) | 170W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
Serie | - | Automotive, AEC-Q101 | TrenchFET® | TEMPFET® |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden MVGSF1N02LT1G PDF DataDhusts an onsemi Dokumentatioun fir MVGSF1N02LT1G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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