MURS260T3 Tech Spezifikatioune
onsemi - MURS260T3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MURS260T3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.45 V @ 2 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | SMB | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 75 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AA, SMB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | MURS26 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MURS260T3.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | MURS260T3 | MURS260-M3/52T | MURS320 | MURS260T3G |
| Hiersteller | onsemi | Vishay General Semiconductor - Diodes Division | Yangjie Technology | onsemi |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | - | -65°C ~ 175°C |
| Technologie | Standard | Standard | - | Standard |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | - | - | - | - |
| Supplier Device Package | SMB | DO-214AA (SMB) | - | SMB |
| Voltage - Viru (Vf) (Max) @ Wann | 1.45 V @ 2 A | 1.45 V @ 2 A | - | 1.45 V @ 2 A |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | 2A | - | 2A |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | - | 600 V |
| Mounting Type | Surface Mount | Surface Mount | - | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | 5 µA @ 600 V | - | 5 µA @ 600 V |
| Package / Case | DO-214AA, SMB | DO-214AA, SMB | - | DO-214AA, SMB |
| Reverse Recovery Time (trr) | 75 ns | 75 ns | - | 75 ns |
| Basis Produktnummer | MURS26 | MURS260 | - | MURS260 |
Eroflueden MURS260T3 PDF DataDhusts an onsemi Dokumentatioun fir MURS260T3 - onsemi.
MURS260-M3/52TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 2A DO214AAMURS320Yangjie TechnologySMC 200V 3.0A Diodes Rectifier
MURS260-E3S/5BTElectro-Films (EFI) / Vishay
MURS260-A-56L-2GULFSEMI
MURS260ONsemiMURS260T3GonsemiDIODE GEN PURP 600V 2A SMB
MURS3060-BPMicro Commercial CoInterfaceMURS260HE3Electro-Films (EFI) / Vishay
MURS320-13-FDiodes IncorporatedDIODE GEN PURP 200V 3A SMCMURS240Yangjie TechnologySMB 400V 2.0A Diodes RectifierMURS3100T3GAMI Semiconductor/onsemiMURS240-E3/52TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 2A DO214AAMURS240T3GonsemiDIODE GEN PURP 400V 2A SMBMURS320Diodes IncorporatedDIODE GEN PURP 200V 3A SMC TR 3K
MURS320SMC Diode SolutionsDIODE GEN PURP 200V 3A SMCMURS2DAFL-TPMicro Commercial Components (MCC)MURS2D-TPMicro Commercial CoInterfaceMURS260-E3/52TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 2A DO214AA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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