MURS230T3G Tech Spezifikatioune
onsemi - MURS230T3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MURS230T3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 2 A | |
| Voltage - DC Reverse (Vr) (Max) | 300 V | |
| Technologie | Standard | |
| Supplier Device Package | SMB | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 65 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AA, SMB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 300 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | MURS230 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MURS230T3G.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | MURS230T3G | MURS260-E3/52T | MURS220T3G | MURS240 |
| Hiersteller | onsemi | Vishay General Semiconductor - Diodes Division | onsemi | Yangjie Technology |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2A | 2A | 2A | - |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 2 A | 1.45 V @ 2 A | 950 mV @ 2 A | - |
| Supplier Device Package | SMB | DO-214AA (SMB) | SMB | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 300 V | 5 µA @ 600 V | 2 µA @ 200 V | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Basis Produktnummer | MURS230 | MURS260 | MURS220 | - |
| Package / Case | DO-214AA, SMB | DO-214AA, SMB | DO-214AA, SMB | - |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | - |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | - |
| Voltage - DC Reverse (Vr) (Max) | 300 V | 600 V | 200 V | - |
| Reverse Recovery Time (trr) | 65 ns | 75 ns | 35 ns | - |
Eroflueden MURS230T3G PDF DataDhusts an onsemi Dokumentatioun fir MURS230T3G - onsemi.
MURS260-E3/52TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 2A DO214AA
MURS205GS
MURS160T3G-01AMI Semiconductor/onsemiMURS260-A-56L-2GULFSEMIMURS220T3GonsemiDIODE GEN PURP 200V 2A SMBMURS240Yangjie TechnologySMB 400V 2.0A Diodes RectifierMURS240-E3/52TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 2A DO214AAMURS210T3GonsemiDIODE GEN PURP 100V 2A SMBMURS160T3GonsemiDIODE GEN PURP 600V 1A SMB
MURS260HE3Electro-Films (EFI) / VishayMURS260-E3S/5BTElectro-Films (EFI) / VishayMURS210T3onsemiDIODE GEN PURP 100V 2A SMBMURS215T3GAMI Semiconductor/onsemiMURS240T3GonsemiDIODE GEN PURP 400V 2A SMBMURS260ONsemiMURS220T3onsemiDIODE ULTRA FAST 2A 200V SMBMURS260-M3/52TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 2A DO214AAMURS205T3GonsemiDIODE GEN PURP 50V 2A SMB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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