MUR8100EG Tech Spezifikatioune
onsemi - MUR8100EG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MUR8100EG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.8 V @ 8 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220-2 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | SWITCHMODE™ | |
| Reverse Recovery Time (trr) | 100 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | MUR8100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MUR8100EG.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | MUR8100EG | MUR815G | MUR7020 | MUR820 |
| Hiersteller | onsemi | onsemi | GeneSiC Semiconductor | Taiwan Semiconductor Corporation |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 150 V | 200 V | 200 V |
| Serie | SWITCHMODE™ | SWITCHMODE™ | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 175°C |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 1000 V | 5 µA @ 150 V | 25 µA @ 50 V | 5 µA @ 200 V |
| Package / Case | TO-220-2 | TO-220-2 | DO-203AB, DO-5, Stud | TO-220-2 |
| Voltage - Viru (Vf) (Max) @ Wann | 1.8 V @ 8 A | 975 mV @ 8 A | 1 V @ 70 A | 975 mV @ 8 A |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Chassis, Stud Mount | Through Hole |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | 8A | 70A | 8A |
| Supplier Device Package | TO-220-2 | TO-220-2 | DO-5 | TO-220AC |
| Basis Produktnummer | MUR8100 | MUR815 | - | - |
| Technologie | Standard | Standard | Standard | Standard |
| Reverse Recovery Time (trr) | 100 ns | 35 ns | 75 ns | 25 ns |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Eroflueden MUR8100EG PDF DataDhusts an onsemi Dokumentatioun fir MUR8100EG - onsemi.
MUR815GonsemiDIODE GEN PURP 150V 8A TO220-2MUR7020GeneSiC SemiconductorDIODE GEN PURP 200V 70A DO5MUR8120AMI Semiconductor/onsemiMUR820Taiwan Semiconductor CorporationDIODE GEN PURP 200V 8A TO220ACMUR805onsemiDIODE GEN PURP 50V 8A TO220-2MUR8100EHarris CorporationDIODE GEN PURP 1KV 8A TO220-2MUR805TMUR810GonsemiDIODE GEN PURP 100V 8A TO220-2MUR820onsemiDIODE GEN PURP 200V 8A TO220-2MUR815onsemiDIODE GEN PURP 150V 8A TO220-2MUR8100EonsemiDIODE GEN PURP 1KV 8A TO220-2
MUR820Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 8A TO220ACMUR7015MOTOROLAIGBT ModuleMUR816AMI Semiconductor/onsemiMUR805GonsemiDIODE GEN PURP 50V 8A TO220-2MUR8100Harris CorporationDIODE GEN PURP 1KV 8A TO220ACMUR7060GeneSiC SemiconductorDIODE GEN PURP 600V 70A DO5MUR815Harris CorporationDIODE GEN PURP 150V 8A TO220-2| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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