MTD6N20ET4 Tech Spezifikatioune
onsemi - MTD6N20ET4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MTD6N20ET4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3A, 10V | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
| Basis Produktnummer | MTD6N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MTD6N20ET4.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | MTD6N20ET4 | MTD6N15T4 | MTD6N15T4G | MTD6P10ET4 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 1mA | 4.5V @ 1mA | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3A, 10V | 300mOhm @ 3A, 10V | 300mOhm @ 3A, 10V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V | 1200 pF @ 25 V | 1200 pF @ 25 V | - |
| Basis Produktnummer | MTD6N | MTD6N | MTD6N | MTD6P |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 6A (Tc) | 6A (Tc) | - |
| Package protegéieren | Cut Tape (CT) | Cut Tape (CT) | Tape & Reel (TR) | - |
| Supplier Device Package | DPAK | DPAK | DPAK | - |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 30 nC @ 10 V | 30 nC @ 10 V | - |
| Serie | - | - | - | * |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Entworf fir Source Voltage (Vdss) | 200 V | 150 V | 150 V | - |
Eroflueden MTD6N20ET4 PDF DataDhusts an onsemi Dokumentatioun fir MTD6N20ET4 - onsemi.
MTD6P10E MOSAMI Semiconductor/onsemi
MTD803FMYSONMTD91A16/25NSiemensIGBT ModuleMTD6N15T4G MOSAMI Semiconductor/onsemiMTD6N15AMI Semiconductor/onsemiMTD6N15T4onsemiMOSFET N-CH 150V 6A DPAKMTD6N20E MOSAMI Semiconductor/onsemiMTD6N15T4GonsemiMOSFET N-CH 150V 6A DPAKMTD907VMYSONMTD6N10RLAMI Semiconductor/onsemiMTD6P10ET4onsemiMOSFET POWER P-CH -100V 6A DPAKMTD6N15 MOSAMI Semiconductor/onsemiMTD80N02 MOSAMI Semiconductor/onsemiMTD900FMYSONMTD90-04ANOIGBT ModuleMTD6N10T4AMI Semiconductor/onsemiMTD6N20EAMI Semiconductor/onsemiMTD6N20ET4GonsemiMOSFET N-CH 200V 6A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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