MTB75N05HDT4 Tech Spezifikatioune
onsemi - MTB75N05HDT4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MTB75N05HDT4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D²PAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | |
| Basis Produktnummer | MTB75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MTB75N05HDT4.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | MTB75N05HDT4 | MTB6N60E1 | MTB75N06HD | MTB6N60E |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Supplier Device Package | D²PAK | - | - | - |
| Vgs (Max) | ±20V | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | - | - | - |
| Basis Produktnummer | MTB75 | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | - | - |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V | - | - | - |
| Mounting Type | Surface Mount | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V | - | - | - |
| Serie | - | * | * | * |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | - | - | - |
| FET Typ | N-Channel | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 50 V | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | - | - | - |
Eroflueden MTB75N05HDT4 PDF DataDhusts an onsemi Dokumentatioun fir MTB75N05HDT4 - onsemi.
MTB6N60E1onsemiN-CHANNEL POWER MOSFETMTB75N03HDLT4AMI Semiconductor/onsemi
MTB7D0N06RV8CYSTEKMTB6D0N03BH8CYSTEKMTB75N06HDonsemiN-CHANNEL POWER MOSFETMTB75N05HD MOSAMI Semiconductor/onsemiMTB90P06J3CYSTEKECMTB75N06HDT4AMI Semiconductor/onsemiMTB75N05HDMOTOROLAMTB7D0P03J3CYSTECHMTB75N03HDLT4GAMI Semiconductor/onsemiMTB90P06Q8VBSEMIMTB9D0P03H8CYSTECHMTB75N06T4GAMI Semiconductor/onsemiMTB75N03HDLAMI Semiconductor/onsemiMTB6N60EonsemiN-CHANNEL POWER MOSFETMTB6N60ET4onsemi6A, 600V, 1.2OHM, N-CHANNELMTB80A08Q8CYSTEK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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