MTB50P03HDLT4G Tech Spezifikatioune
onsemi - MTB50P03HDLT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MTB50P03HDLT4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±15V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D²PAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V | |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
| Basis Produktnummer | MTB50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MTB50P03HDLT4G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MTB50P03HDLT4G | MTB50P03HDLT4 | MTB50P03HDLG | MTB50P03HDL |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 50A (Tc) | 50A (Tc) | 50A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | - | 5V | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| FET Feature | - | - | - | - |
| Basis Produktnummer | MTB50 | MTB50 | MTB50 | MTB50 |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V | 4900 pF @ 25 V | 4900 pF @ 25 V | 4900 pF @ 25 V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tube | Tube |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V | 100 nC @ 5 V | 100 nC @ 5 V | 100 nC @ 5 V |
| Vgs (Max) | ±15V | - | ±15V | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) | - | 2.5W (Ta), 125W (Tc) | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V | 25mOhm @ 25A, 5V | 25mOhm @ 25A, 5V | 25mOhm @ 25A, 5V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | D²PAK | D²PAK | D²PAK | D²PAK |
| Serie | - | - | - | - |
Eroflueden MTB50P03HDLT4G PDF DataDhusts an onsemi Dokumentatioun fir MTB50P03HDLT4G - onsemi.
MTB50A08Q8MTB55N03N3CYSTEKMTB5D0C03J4CYSTECHMTB55N10Q8CYSTECH
MTB50P03HGRF4GAMI Semiconductor/onsemiMTB50P03HGAMI Semiconductor/onsemiMTB52N06VLT4AMI Semiconductor/onsemiMTB50P03HDLT4onsemiMOSFET P-CH 30V 50A D2PAKMTB50N06MOTOROLAMTB50N06ELMOTOROLAMTB50N06VT4MOTMTB50N06VLAMI Semiconductor/onsemiMTB50A08Q8-0-T3-GCYSTEKMTB55N03J3CYSTEKECMTB50P03HDLGonsemiMOSFET P-CH 30V 50A D2PAKMTB55N03KSN3CYSTEKECMTB50P03HDLonsemiMOSFET P-CH 30V 50A D2PAKMTB55N03KN3CYSTEKEC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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