MMDF2C03HDR2G Tech Spezifikatioune
onsemi - MMDF2C03HDR2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MMDF2C03HDR2G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 24V | |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A, 3A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | MMDF2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MMDF2C03HDR2G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MMDF2C03HDR2G | MMDF2P02ER2 | MMDF2P02ER2G | MMDF2N02ER2 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V | 15nC @ 10V | 15nC @ 10V | 30nC @ 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 10V | 250mOhm @ 2A, 10V | 250mOhm @ 2A, 10V | 100mOhm @ 2.2A, 10V |
| Serie | - | - | - | - |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Entworf fir Source Voltage (Vdss) | 30V | 25V | 25V | 25V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 24V | 475pF @ 16V | 475pF @ 16V | 532pF @ 16V |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A, 3A | 2.5A | 2.5A | 3.6A |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Konfiguratioun | N and P-Channel | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | MMDF2 | MMDF2 | MMDF2 | MMDF2 |
| Power - Max | 2W | 2W | 2W | 2W |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Eroflueden MMDF2C03HDR2G PDF DataDhusts an onsemi Dokumentatioun fir MMDF2C03HDR2G - onsemi.
MMDF2C02HDR2GAMI Semiconductor/onsemiMMDF2C01HDR2GAMI Semiconductor/onsemiMMDF2P01HDR2onsemiP-CHANNEL POWER MOSFETMMDF2P02ER2onsemiMOSFET PWR P-CH 25V 2.5A 8-SOIC
MMDF2C02ER2MOTOROLAMMDF2C02HDR2MOTOROLAMMDF2N02ERMOTOROLAMMDF2P02ER2GonsemiMOSFET 2P-CH 25V 2.5A 8SOICMMDF2N05ZR2GAMI Semiconductor/onsemiMMDF2C02EAMI Semiconductor/onsemiMMDF2C03HDAMI Semiconductor/onsemiMMDF2C02ER2GAMI Semiconductor/onsemiMMDF2N05ZR2onsemiSMALL SIGNAL N-CHANNEL MOSFETMMDF2N02ER2onsemiMOSFET 2N-CH 25V 3.6A 8-SOICMMDF2N02ER2GonsemiMOSFET 2N-CH 25V 3.6A 8-SOICMMDF2P01HDR2GAMI Semiconductor/onsemiMMDF2C02HDRAMI Semiconductor/onsemiMMDF2C03HDR2onsemiMOSFET N/P-CH 30V 4.1A/3A 8SOIC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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