MMBTA14LT1G Tech Spezifikatioune
onsemi - MMBTA14LT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MMBTA14LT1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA | |
| Transistor Type | NPN - Darlington | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | - | |
| Power - Max | 225 mW | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 125MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 300 mA | |
| Basis Produktnummer | MMBTA14 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MMBTA14LT1G.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | MMBTA14LT1G | MMBTA13LT1G | MMBTA42 | MMBTA42 |
| Hiersteller | onsemi | onsemi | Good-Ark Semiconductor | STMicroelectronics |
| Frequenz - Iwwergang | 125MHz | 125MHz | 50MHz | 50MHz |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V | 10000 @ 100mA, 5V | 100 @ 10mA, 10V | 60 @ 1mA, 10V |
| Basis Produktnummer | MMBTA14 | MMBTA13 | - | MMBT |
| Serie | - | - | - | SOT-23 |
| Power - Max | 225 mW | 225 mW | 350 mW | 350 mW |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Transistor Type | NPN - Darlington | NPN - Darlington | NPN | NPN |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | 250nA (ICBO) | 250nA (ICBO) |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23 | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Aktuell - Sammler (Ic) (Max) | 300 mA | 300 mA | 300 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V | 300 V | 300 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA | 1.5V @ 100µA, 100mA | 200mV @ 2mA, 20mA | 200mV @ 2mA, 20mA |
Eroflueden MMBTA14LT1G PDF DataDhusts an onsemi Dokumentatioun fir MMBTA14LT1G - onsemi.
MMBTA13LT1GonsemiTRANS NPN DARL 30V 0.3A SOT23-3MMBTA42Good-Ark SemiconductorTRANSISTOR, NPN, 500MA, 300V, SOMMBTA42STMicroelectronicsTRANS NPN 300V 0.5A SOT23-3MMBTA14-1NTAITRONMMBTA14-RTK/PKEC
MMBTA14-7-FDiodes IncorporatedTRANS NPN DARL 30V 0.3A SOT23-3
MMBTA14onsemiTRANS NPN DARL 30V 1.2A SOT23-3
MMBTA14Yangjie TechnologyTransistors - Bipolar (BJT) - SiMMBTA42onsemiTRANS NPN 300V 0.5A SOT23-3MMBTA28onsemiTRANS NPN DARL 80V 0.8A SOT23-3MMBTA42 1DCJMMBTA42Diotec SemiconductorTRANS NPN 300V 0.5A SOT23-3MMBTA14G-AE3-RUTCMMBTA14LT1onsemiTRANS SS DARL NPN 30V SOT23MMBTA28-7-FDiodes IncorporatedTRANS NPN DARL 80V 0.5A SOT23-3
MMBTA14Fairchild SemiconductorTRANS NPN DARL 30V 1.2A SOT23-3MMBTA28-7Diodes IncorporatedTRANS NPN DARL 80V 0.5A SOT23-3MMBTA42 100-200CJ| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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