MJD45H11-1G Tech Spezifikatioune
onsemi - MJD45H11-1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MJD45H11-1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A | |
| Transistor Type | PNP | |
| Supplier Device Package | I-PAK | |
| Serie | - | |
| Power - Max | 1.75 W | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 90MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V | |
| Aktuell - Kollektorat Cutoff (Max) | 1µA | |
| Aktuell - Sammler (Ic) (Max) | 8 A | |
| Basis Produktnummer | MJD45 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MJD45H11-1G.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | MJD45H11-1G | MJD44H11TM | MJD44H11TM | MJD44H11TF |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V | 60 @ 2A, 1V | - | 40 @ 4A, 1V |
| Frequenz - Iwwergang | 90MHz | 85MHz | - | 50MHz |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | - | 80 V |
| Mounting Type | Through Hole | Surface Mount | - | Surface Mount |
| Transistor Type | PNP | NPN | - | NPN |
| Serie | - | - | * | - |
| Aktuell - Sammler (Ic) (Max) | 8 A | 8 A | - | 8 A |
| Basis Produktnummer | MJD45 | - | MJD44 | - |
| Supplier Device Package | I-PAK | TO-252-3 (DPAK) | - | D-Pak |
| Power - Max | 1.75 W | 1.75 W | - | 1.75 W |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Aktuell - Kollektorat Cutoff (Max) | 1µA | 1µA | - | 10µA |
| Package protegéieren | Tube | Bulk | Tape & Reel (TR) | Bulk |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A | 1V @ 400mA, 8A | - | 1V @ 400mA, 8A |
Eroflueden MJD45H11-1G PDF DataDhusts an onsemi Dokumentatioun fir MJD45H11-1G - onsemi.
MJD44H11TMFairchild SemiconductorTRANS NPN 80V 8A TO252-3MJD44H11TMonsemiTRANS NPN 80V 8A DPAKMJD45H11T4 MOSAMI Semiconductor/onsemiMJD44H11TFonsemiTRANS NPN 80V 8A DPAK
MJD45H11GonsemiTRANS PNP 80V 8A DPAKMJD45H11RLonsemiTRANS POWER PNP 8A 80V DPAK
MJD45H11JNexperiaMJD45H11 MOSFairchild (onsemi)
MJD45H11-13Diodes Incorporated
MJD45H11T4STMicroelectronicsTRANS PNP 80V 8A DPAKMJD44H11T4G J44H11GAMI Semiconductor/onsemiMJD45H11T4GonsemiTRANS PNP 80V 8A DPAKMJD44H11T4G/J44H11GAMI Semiconductor/onsemi
MJD45H11G MOSMJD45H11T4G/J45H11GAMI Semiconductor/onsemiMJD45H11Fairchild (onsemi)MJD45H11RLGonsemiTRANS PNP 80V 8A DPAKMJD45H11-001onsemiTRANS PNP 80V 8A IPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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