MJD44E3T4G Tech Spezifikatioune
onsemi - MJD44E3T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MJD44E3T4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 10A | |
| Transistor Type | NPN - Darlington | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 1.75 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | - | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 10µA | |
| Aktuell - Sammler (Ic) (Max) | 10 A | |
| Basis Produktnummer | MJD44 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MJD44E3T4G.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | MJD44E3T4G | MJD44H11G | MJD42CRLG | MJD42CT4 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V | 40 @ 4A, 1V | 15 @ 3A, 4V | 15 @ 3A, 4V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Transistor Type | NPN - Darlington | NPN | PNP | PNP |
| Power - Max | 1.75 W | 1.75 W | 1.75 W | 20 W |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | 100 V | 100 V |
| Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Cut Tape (CT) |
| Aktuell - Sammler (Ic) (Max) | 10 A | 8 A | 6 A | 6 A |
| Serie | - | - | - | - |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 10A | 1V @ 400mA, 8A | 1.5V @ 600mA, 6A | 1.5V @ 600mA, 6A |
| Frequenz - Iwwergang | - | 85MHz | 3MHz | 3MHz |
| Basis Produktnummer | MJD44 | MJD44 | MJD42 | MJD42 |
| Aktuell - Kollektorat Cutoff (Max) | 10µA | 1µA | 50µA | 50µA |
| Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
Eroflueden MJD44E3T4G PDF DataDhusts an onsemi Dokumentatioun fir MJD44E3T4G - onsemi.
MJD44H11GonsemiTRANS NPN 80V 8A DPAK
MJD44H11AJNexperia
MJD44H11 MOSFairchild (onsemi)MJD42CRLGonsemiTRANS PNP 100V 6A DPAKMJD42CT4onsemiTRANS PWR PNP 6A 100V DPAK
MJD42CG MOSAMI Semiconductor/onsemiMJD42CGonsemiTRANS PNP 100V 6A DPAK
MJD44H11-7Diodes Incorporated
MJD44H11AFreescale / NXP SemiconductorsMJD44H11onsemiTRANS POWER NPN 8A 80V DPAKMJD42CT4G/J42CGAMI Semiconductor/onsemiMJD42C-1GAMI Semiconductor/onsemi
MJD44H11-001onsemiTRANS NPN 80V 8A IPAKMJD44H11-1GonsemiTRANS NPN 80V 8A IPAK
MJD42CT4G MOSMJD44E3T4onsemiTRANS PWR DARL NPN 10A 80V DPAKMJD44H11G MOSMJD42CT4GonsemiTRANS PNP 100V 6A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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