MJD32CT4G Tech Spezifikatioune
onsemi - MJD32CT4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MJD32CT4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | |
| Transistor Type | PNP | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 1.56 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 3MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V | |
| Aktuell - Kollektorat Cutoff (Max) | 50µA | |
| Aktuell - Sammler (Ic) (Max) | 3 A | |
| Basis Produktnummer | MJD32 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MJD32CT4G.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | MJD32CT4G | MJD32CT4 | MJD32CRLG | MJD32C1 |
| Hiersteller | onsemi | STMicroelectronics | onsemi | onsemi |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | 100 V | - |
| Aktuell - Sammler (Ic) (Max) | 3 A | 3 A | 3 A | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | 150°C (TJ) | -65°C ~ 150°C (TJ) | - |
| Transistor Type | PNP | PNP | PNP | - |
| Power - Max | 1.56 W | 15 W | 1.56 W | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V | 10 @ 3A, 4V | 10 @ 3A, 4V | - |
| Serie | - | - | - | * |
| Basis Produktnummer | MJD32 | MJD32 | MJD32 | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Supplier Device Package | DPAK | DPAK | DPAK | - |
| Frequenz - Iwwergang | 3MHz | - | 3MHz | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Aktuell - Kollektorat Cutoff (Max) | 50µA | 50µA | 50µA | - |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | 1.2V @ 375mA, 3A | - |
Eroflueden MJD32CT4G PDF DataDhusts an onsemi Dokumentatioun fir MJD32CT4G - onsemi.
MJD32CT4STMicroelectronicsTRANS PNP 100V 3A DPAKMJD32CRLGonsemiTRANS PNP 100V 3A DPAKMJD32C1onsemiTRANSISTORMJD32RLAMI Semiconductor/onsemi
MJD32CTFFairchild SemiconductorTRANS PNP 100V 3A TO252-3MJD32CT4G/J32CGAMI Semiconductor/onsemiMJD32C1 MOSAMI Semiconductor/onsemiMJD32CT4G MJD32C MOSAMI Semiconductor/onsemi
MJD32CUQ-13Diodes IncorporatedTRANS PNP 100V 3A TO252MJD32CTMFairchild SemiconductorTRANS PNP 100V 3A TO252-3MJD32CQ-13Diodes IncorporatedTRANS PNP 100V 3A TO252-3MJD32CGonsemiTRANS PNP 100V 3A DPAKMJD32CRLonsemiTRANS PNP 100V 3A DPAK
MJD32CTMonsemiTRANS PNP 100V 3A DPAK
MJD32CT4 MOSMOTOROLAMJD32CTFonsemiTRANS PNP 100V 3A DPAKMJD32RL MOSAMI Semiconductor/onsemiMJD32CT4-ASTMicroelectronicsTRANS PNP 100V 3A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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