MJD3055G Tech Spezifikatioune
onsemi - MJD3055G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MJD3055G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A | |
| Transistor Type | NPN | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 1.75 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 2MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V | |
| Aktuell - Kollektorat Cutoff (Max) | 50µA | |
| Aktuell - Sammler (Ic) (Max) | 10 A | |
| Basis Produktnummer | MJD30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MJD3055G.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | MJD3055G | MJD2955T4G | MJD2955TF | MJD3055T4 |
| Hiersteller | onsemi | onsemi | onsemi | STMicroelectronics |
| Power - Max | 1.75 W | 1.75 W | 1.75 W | 20 W |
| Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Aktuell - Sammler (Ic) (Max) | 10 A | 10 A | 10 A | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 60 V | 60 V | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A | 8V @ 3.3A, 10A | 8V @ 3.3A, 10A | 8V @ 3.3A, 10A |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK | DPAK | D-Pak | DPAK |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V | 20 @ 4A, 4V | 20 @ 4A, 4V | 20 @ 4A, 4V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | MJD30 | MJD2955 | - | MJD3055 |
| Serie | - | - | - | - |
| Frequenz - Iwwergang | 2MHz | 2MHz | 2MHz | 2MHz |
| Aktuell - Kollektorat Cutoff (Max) | 50µA | 50µA | 50µA | 50µA |
| Transistor Type | NPN | PNP | PNP | NPN |
Eroflueden MJD3055G PDF DataDhusts an onsemi Dokumentatioun fir MJD3055G - onsemi.
MJD2955T4GonsemiTRANS PNP 60V 10A DPAKMJD2955TFonsemiTRANS PNP 60V 10A DPAKMJD3055T4STMicroelectronicsTRANS NPN 60V 10A DPAKMJD31 MOSAMI Semiconductor/onsemi
MJD2955T4 MOSSTMicroelectronics
MJD29CTFonsemiTRANS NPN 100V 1A DPAKMJD3055T4onsemiTRANS PWR NPN 10A 60V DPAK
MJD29C-1FSCMJD3055T1GAMI Semiconductor/onsemiMJD3055 MOSCJMJD2955T4STMicroelectronicsTRANS PNP 60V 10A DPAKMJD3055TFonsemiTRANS NPN 60V 10A DPAKMJD3055onsemiTRANS NPN 60V 10A DPAKMJD2955T4G MOSMJD3055T4G MOSMJD3055T4GonsemiTRANS NPN 60V 10A DPAK
MJD30CTFFairchild (onsemi)MJD31CSTMicroelectronicsTRANS NPN 100V 3A DPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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