MJD200T4G Tech Spezifikatioune
onsemi - MJD200T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MJD200T4G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A | |
| Transistor Type | NPN | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 1.4 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 65MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 5 A | |
| Basis Produktnummer | MJD200 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MJD200T4G.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | MJD200T4G | MJD210 | MJD210RL | MJD210RLG |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Basis Produktnummer | MJD200 | MJD21 | MJD21 | MJD210 |
| Frequenz - Iwwergang | 65MHz | 65MHz | 65MHz | 65MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
| Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V | 45 @ 2A, 1V | 45 @ 2A, 1V | 45 @ 2A, 1V |
| Power - Max | 1.4 W | 1.4 W | 1.4 W | 1.4 W |
| Transistor Type | NPN | PNP | PNP | PNP |
| Serie | - | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 5 A | 5 A | 5 A | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | 25 V | 25 V | 25 V |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A | 1.8V @ 1A, 5A | 1.8V @ 1A, 5A | 1.8V @ 1A, 5A |
Eroflueden MJD200T4G PDF DataDhusts an onsemi Dokumentatioun fir MJD200T4G - onsemi.
MJD210onsemiTRANS PNP 25V 5A DPAKMJD210RLonsemiTRANS PNP 25V 5A DPAKMJD210RLGonsemiTRANS PNP 25V 5A DPAKMJD210GonsemiTRANS PNP 25V 5A DPAK
MJD13005AMI Semiconductor/onsemiMJD200GonsemiTRANS NPN 25V 5A DPAKMJD210RL MOSAMI Semiconductor/onsemi
MJD210-TFSamsung SemiconductorMJD18002D2T4G MOSAMI Semiconductor/onsemiMJD148T4GonsemiTRANS NPN 45V 4A DPAK
MJD200 MOSMOTOROLAMJD210LUTCMJD210 MOSAMI Semiconductor/onsemiMJD13003UTGMJD200T4onsemiTRANS PWR NPN 5A 25V DPAKMJD200onsemiTRANS NPN 25V 5A DPAKMJD18002D2T4GonsemiTRANS NPN 450V 2A DPAKMJD210L-TN3-RUTC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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