MGSF1N02LT1G Tech Spezifikatioune
onsemi - MGSF1N02LT1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MGSF1N02LT1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.2A, 10V | |
| Power Dissipation (Max) | 400mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 750mA (Ta) | |
| Basis Produktnummer | MGSF1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MGSF1N02LT1G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MGSF1N02LT1G | MGSF1N03LT1 | MGSF1N03LT3G | MGSF1N02LT1 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 30 V | 20 V |
| Basis Produktnummer | MGSF1 | MGSF1 | MGSF1 | MGSF1 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | - | ±20V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V | 4.5V, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.2A, 10V | 100mOhm @ 1.2A, 10V | 100mOhm @ 1.2A, 10V | 90mOhm @ 1.2A, 10V |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA | 2.4V @ 250µA | 2.4V @ 250µA | 2.4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 5 V | 140 pF @ 5 V | 140 pF @ 5 V | 125 pF @ 5 V |
| Serie | - | - | - | - |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Power Dissipation (Max) | 400mW (Ta) | - | 420mW (Ta) | 400mW (Ta) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 750mA (Ta) | 1.6A (Ta) | 1.6A (Ta) | 750mA (Ta) |
Eroflueden MGSF1N02LT1G PDF DataDhusts an onsemi Dokumentatioun fir MGSF1N02LT1G - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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