MCH5839-TL-H Tech Spezifikatioune
onsemi - MCH5839-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MCH5839-TL-H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 5-MCPH | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 266mOhm @ 750mA, 4.5V | |
| Power Dissipation (Max) | 800mW (Ta) | |
| Package / Case | 5-SMD, Flat Leads | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | |
| Basis Produktnummer | MCH5839 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MCH5839-TL-H.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | MCH5839-TL-H | MCH5837-TL-E | MCH6101-TL-E | MCH5819-TL-E |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | - | - |
| Vgs (Max) | ±10V | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V | 115 pF @ 10 V | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 4.5 V | 1.8 nC @ 4 V | - | - |
| FET Typ | P-Channel | N-Channel | - | - |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | - | - |
| Rds On (Max) @ Id, Vgs | 266mOhm @ 750mA, 4.5V | 145mOhm @ 1A, 4V | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Vgs (th) (Max) @ Id | - | - | - | - |
| Supplier Device Package | 5-MCPH | 5-MCPH | 6-MCPH | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | - | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Serie | - | - | - | * |
| Power Dissipation (Max) | 800mW (Ta) | 800mW (Ta) | - | - |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Bulk |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A (Ta) | 2A (Ta) | - | - |
| Package / Case | 5-SMD, Flat Leads | 6-SMD (5 Leads), Flat Lead | 6-SMD, Flat Leads | - |
| Basis Produktnummer | MCH5839 | - | MCH6101 | - |
Eroflueden MCH5839-TL-H PDF DataDhusts an onsemi Dokumentatioun fir MCH5839-TL-H - onsemi.
MCH6101-TL-EonsemiTRANS PNP 15V 1.5A 6MCPHMCH5819-TL-EonsemiNCH+SBD 4V DRIVE SERIESMCH6101-TLMCH5835-TL-EonsemiNCH+SBD 2.5V DRIVE SERIESMCH5819-TL-E PB-FREEAMI Semiconductor/onsemiMCH5826-TL-EAMI Semiconductor/onsemiMCH6201-TL-EonsemiBIP NPN 1.5A 15VMCH5818-TL-EonsemiPCH+SBD 4V DRIVE SERIESMCH6201AMI Semiconductor/onsemiMCH6301-TL-EAMI Semiconductor/onsemiMCH6103-TL-EonsemiTRANS PNP 50V 1A 6MCPHMCH6123-TL-EonsemiTRANS PNP 50V 3A 6MCPHMCH6001-TL-EonsemiTRANS 2NPN 8V 0.15A 6MCPHMCH5837-TL-EonsemiMOSFET N-CH 20V 2A 5MCPHMCH5815-TL-ESanyoP-CHANNEL SILICON MOSFETMCH6301-TLAMI Semiconductor/onsemiMCH5812-TL-EAMI Semiconductor/onsemiMCH5836-TL-EonsemiPCH+SBD 1.8V DRIVE SERIES| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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