MBR360 Tech Spezifikatioune
onsemi - MBR360 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MBR360
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 740 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Technologie | Schottky | |
| Supplier Device Package | Axial | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-201AA, DO-27, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 600 µA @ 60 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | MBR360 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MBR360.
| Produktiounsattriff |  |
 |
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|---|---|---|---|---|
| Part Number | MBR360 | MBR3530 | MBR360RL | MBR360RLG |
| Hiersteller | onsemi | GeneSiC Semiconductor | onsemi | onsemi |
| Aktuell - Reverse Leakage @ Vr | 600 µA @ 60 V | 1.5 mA @ 20 V | 600 µA @ 60 V | 600 µA @ 60 V |
| Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 30 V | 60 V | 60 V |
| Voltage - Viru (Vf) (Max) @ Wann | 740 mV @ 3 A | 680 mV @ 35 A | 740 mV @ 3 A | 740 mV @ 3 A |
| Package / Case | DO-201AA, DO-27, Axial | DO-203AA, DO-4, Stud | DO-201AA, DO-27, Axial | DO-201AA, DO-27, Axial |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Serie | - | - | - | - |
| Capacitance @ Vr, F. | - | - | - | - |
| Supplier Device Package | Axial | DO-4 | Axial | Axial |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 35A | 3A | 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Chassis, Stud Mount | Through Hole | Through Hole |
| Basis Produktnummer | MBR360 | - | MBR360 | MBR360 |
Eroflueden MBR360 PDF DataDhusts an onsemi Dokumentatioun fir MBR360 - onsemi.
MBR3530GeneSiC SemiconductorDIODE SCHOTTKY 30V 35A DO4MBR360RLonsemiDIODE SCHOTTKY 60V 3A AXIALMBR360RLGonsemiDIODE SCHOTTKY 60V 3A AXIALMBR3540GeneSiC SemiconductorDIODE SCHOTTKY 40V 35A DO4MBR400100CTGeneSiC SemiconductorDIODE MODULE 100V 200A 2TOWERMBR3525MOTOROLAIGBT ModuleMBR400100CTLMOTOROLAIGBT ModuleMBR360GonsemiDIODE SCHOTTKY 60V 3A AXIALMBR3545GeneSiC SemiconductorDIODE SCHOTTKY 45V 35A DO4MBR350LAMI Semiconductor/onsemiMBR3535GeneSiC SemiconductorDIODE SCHOTTKY 35V 35A DO4MBR3H150SSPANJITMBR400150CTGeneSiC SemiconductorDIODE SCHOTTKY 150V 200A 2 TOWERMBR3520GeneSiC SemiconductorDIODE SCHOTTKY 20V 35A DO4MBR360Diotec SemiconductorDIODE SCHOTTKY 60V 3A DO201MBR400200CTGeneSiC SemiconductorDIODE SCHOTTKY 200V 200A 2 TOWERMBR350RLGonsemiDIODE SCHOTTKY 50V 3A AXIALMBR400100NOIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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